Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials.
Identifieur interne : 001082 ( Main/Exploration ); précédent : 001081; suivant : 001083Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials.
Auteurs : RBID : pubmed:21721724Abstract
A tubular furnace specifically designed for growing nanostructured materials is presented in this work. The configuration allows an accurate control of evaporation temperature, substrate temperature, total pressure, oxygen partial pressure, volumetric flow and source-substrate distance, with the possibility of performing both downstream and upstream depositions. In order to illustrate the versatility of the equipment, the furnace was used for growing semiconducting oxide nanostructures under different deposition conditions. Highly crystalline indium oxide nanowires with different morphologies were synthesized by evaporating mixtures of indium oxide and graphite powders with different mass ratios at temperatures between 900 °C and 1050 °C. The nanostructured layers were deposited onto oxidized silicon substrates with patterned gold catalyst in the temperature range from 600 °C to 900 °C. Gas sensors based on these nanowires exhibited enhanced sensitivity towards oxygen, with good response and recovery times.
DOI: 10.1063/1.3597577
PubMed: 21721724
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials.</title><author><name sortKey="Joanni, E" uniqKey="Joanni E">E Joanni</name><affiliation wicri:level="1"><nlm:affiliation>Centro de Tecnologia da Informação Renato Archer - CTI, Rod. Dom Pedro I km 143.6, 13069-901, Campinas, SP, Brasil. ednan.joanni@cti.gov.br</nlm:affiliation><country xml:lang="fr">Brésil</country><wicri:regionArea>Centro de Tecnologia da Informação Renato Archer - CTI, Rod. Dom Pedro I km 143.6, 13069-901, Campinas, SP</wicri:regionArea></affiliation></author><author><name sortKey="Savu, R" uniqKey="Savu R">R Savu</name></author><author><name sortKey="Valadares, L" uniqKey="Valadares L">L Valadares</name></author><author><name sortKey="Cilense, M" uniqKey="Cilense M">M Cilense</name></author><author><name sortKey="Zaghete, M A" uniqKey="Zaghete M">M A Zaghete</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1063/1.3597577</idno><idno type="RBID">pubmed:21721724</idno><idno type="pmid">21721724</idno><idno type="wicri:Area/Main/Corpus">001296</idno><idno type="wicri:Area/Main/Curation">001296</idno><idno type="wicri:Area/Main/Exploration">001082</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A tubular furnace specifically designed for growing nanostructured materials is presented in this work. The configuration allows an accurate control of evaporation temperature, substrate temperature, total pressure, oxygen partial pressure, volumetric flow and source-substrate distance, with the possibility of performing both downstream and upstream depositions. In order to illustrate the versatility of the equipment, the furnace was used for growing semiconducting oxide nanostructures under different deposition conditions. Highly crystalline indium oxide nanowires with different morphologies were synthesized by evaporating mixtures of indium oxide and graphite powders with different mass ratios at temperatures between 900 °C and 1050 °C. The nanostructured layers were deposited onto oxidized silicon substrates with patterned gold catalyst in the temperature range from 600 °C to 900 °C. Gas sensors based on these nanowires exhibited enhanced sensitivity towards oxygen, with good response and recovery times.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">21721724</PMID><DateCreated><Year>2011</Year><Month>07</Month><Day>04</Day></DateCreated><DateCompleted><Year>2011</Year><Month>11</Month><Day>15</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1089-7623</ISSN><JournalIssue CitedMedium="Internet"><Volume>82</Volume><Issue>6</Issue><PubDate><Year>2011</Year><Month>Jun</Month></PubDate></JournalIssue><Title>The Review of scientific instruments</Title><ISOAbbreviation>Rev Sci Instrum</ISOAbbreviation></Journal><ArticleTitle>Thermal evaporation furnace with improved configuration for growing nanostructured inorganic materials.</ArticleTitle><Pagination><MedlinePgn>065101</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1063/1.3597577</ELocationID><Abstract><AbstractText>A tubular furnace specifically designed for growing nanostructured materials is presented in this work. The configuration allows an accurate control of evaporation temperature, substrate temperature, total pressure, oxygen partial pressure, volumetric flow and source-substrate distance, with the possibility of performing both downstream and upstream depositions. In order to illustrate the versatility of the equipment, the furnace was used for growing semiconducting oxide nanostructures under different deposition conditions. Highly crystalline indium oxide nanowires with different morphologies were synthesized by evaporating mixtures of indium oxide and graphite powders with different mass ratios at temperatures between 900 °C and 1050 °C. The nanostructured layers were deposited onto oxidized silicon substrates with patterned gold catalyst in the temperature range from 600 °C to 900 °C. Gas sensors based on these nanowires exhibited enhanced sensitivity towards oxygen, with good response and recovery times.</AbstractText><CopyrightInformation>© 2011 American Institute of Physics</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Joanni</LastName><ForeName>E</ForeName><Initials>E</Initials><Affiliation>Centro de Tecnologia da Informação Renato Archer - CTI, Rod. Dom Pedro I km 143.6, 13069-901, Campinas, SP, Brasil. ednan.joanni@cti.gov.br</Affiliation></Author><Author ValidYN="Y"><LastName>Savu</LastName><ForeName>R</ForeName><Initials>R</Initials></Author><Author ValidYN="Y"><LastName>Valadares</LastName><ForeName>L</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Cilense</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Zaghete</LastName><ForeName>M A</ForeName><Initials>MA</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Rev Sci Instrum</MedlineTA><NlmUniqueID>0405571</NlmUniqueID><ISSNLinking>0034-6748</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>7</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>7</Month><Day>5</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>7</Month><Day>5</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1063/1.3597577</ArticleId><ArticleId IdType="pubmed">21721724</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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